1n5624gp thru 1n5627gp document number 88524 14-oct-05 vishay general semiconductor www.vishay.com 1 do-201ad p a t e n t e d * ? * glass-plastic encapsulation technique is covered by patent no. 3,996,602, and brazed-lead assembly by patent no. 3,930,306 glass passivated junction rectifier major ratings and characteristics i f(av) 3.0 a v rrm 200 v to 800 v i fsm 125 a i r 5.0 a v f 0.95 v t j max. 175 c features superectifier struct ure for high reliability application cavity-free glass-passivated junction low forward voltage drop low leakage current high forward surge capability meets environmental standard mil-s-19500 solder dip 260 c, 40 seconds typical applications for use in general purpose rectification of power sup- plies, inverters, converters and freewheeling diodes application mechanical data case: do-201ad, molded epoxy over glass body epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 1n5624gp 1n5625gp 1n5626gp 1n5627gp unit * maximum repetitive peak reverse voltage v rrm 200 400 600 800 v * maximum dc blocking voltage v dc 200 400 600 800 v * maximum average forward rectified current 0.375? (9.5 mm) lead length at t a = 70 c i f(av) 3.0 a * peak forward surge current 8.3 ms single half sine- wave superimposed on rated load i fsm 125 a maximum full load reverse current, full cycle average 0.375? (9.5 mm) lead length at t a = 70 c i r(av) 200 a * operating junction and storage temperature range t j , t stg - 65 to + 175 c
www.vishay.com 2 document number 88524 14-oct-05 1n5624gp thru 1n5627gp vishay general semiconductor electrical characteristics (t a = 25 c unless otherwise noted) notes: (1) pulse test: 300 s pulse width, 1 % duty cycle thermal characteristics (t a = 25 c unless otherwise noted) notes: (1) thermal resistance from junction to ambient, and from j unction to lead at 0.375" (9.5 mm) lead length, p.c.b. mounted * jedec registered values ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter test condition symbol 1n5624gp 1n5625gp 1n5626gp 1n5627gp unit * maximum instantaneous forward voltage at 3.0 a (1) t a = 25 c t a = 70 c v f 1.0 0.95 v maximum dc reverse current at rated dc blocking voltage t a = 25 c i r 5.0 a t a = 150 c 300 200 typical reverse recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 3.0 s typical junction capacitance at 4.0 v, 1 mhz c j 40 pf parameter symbol 1n5624gp 1n5625gp 1n5626gp 1n5627gp unit typical thermal resistance (1) r ja 20 c/w figure 1. forward current derating curve 0 25 0 50 75 100 125 150 175 4.0 3.0 1.0 2.0 60 hz resisti v e or ind u cti v e load 0.375? (9.5 mm) lead length am b ient temperat u re (c) a v erage for w ard rectified c u rrent (a) figure 2. maximum non-repetitive peak forward surge current 200 100 10 0 0 1 110 t j = t j max. 8 .3 ms single half sine- w a v e nu m b er of cycles at 60 hz a v erage for w ard c u rrent ( a)
1n5624gp thru 1n5627gp document number 88524 14-oct-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 0.1 10 100 1 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle 020 60 0 0 1 0 4 8 0 0.01 0.1 1 10 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) t j = 125 c t j = 25 c t j = 75 c figure 5. typical junction capacitance re v erse v oltage ( v ) j u nction capacitance (pf) 0 0 1 0 1 1 100 10 t j = 25 c f = 1.0 mhz v sig = 50m v p-p 0.210 (5.3) 0.190 (4.8) dia. 0.052 (1.32) 0.048 (1.22) dia. 1.0 (25.4) min. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) min. do-201ad
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